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型号	下载订购	功能描述	制造商上传企业	LOGO
IPB65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：2.33045 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON
IPB65R110CFDA	文件：300 bytes Page：1 Pages	20V-650V汽车级MOSFET 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;	Infineon 英飞凌	Infineon
IPP65R110CFD	文件：3.85934 Mbytes Page：20 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPP65R110CFD	文件：338.95 Kbytes Page：2 Pages	N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.11Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f 文件：338.95 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IPP65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：2.33045 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON

技术参数

OPN：
IPB65R110CFDAATMA1
Qualification：
Automotive
Package name：
PG-TO263-3
VDS max：
650 V
RDS (on) @10V max：
110 mΩ
ID @25°C max：
31.2 A
QG typ @10V：
118 nC
Special Features：
automotive
Polarity：
N
VGS(th) min：
3.5 V
VGS(th) max：
4.5 V
Technology：
CoolMOS™ CFDA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛特兴科技有限公司	IPB65R110CFDA	INFINEON	23+	N/A	10000	正规渠道,只有原装!	询价
深圳市高捷芯城科技有限公司	IPB65R110CFDA	Infineon(英飞凌)	24+	标准封装	8548	原厂渠道供应,大量现货,原型号开票。	询价
中天科工半导体（深圳）有限公司	IPB65R110CFDA	Infineon(英飞凌)	26+	TO-263-3	79866	Infineon(英飞凌)_IPB65R110CFDA即刻询购立享优惠#长期有订	询价
深圳市振芯物联科技有限公司	IPB65R110CFDA	INFINEON/英飞凌	26+	D2PAK(TO-263)	10000	只做原装欢迎含税交易,假一赔十,放心购买	询价
深圳市诚研翔科技有限公司	IPB65R110CFDA	INFINEON	20+	TO-263	4000	全新原装公司现货	询价
深圳市能创芯电子科技有限公司	IPB65R110CFDA	INFINEON	23+	TO-263	20000	进口原装现货	询价
深圳市豪迈兴电子有限公司	IPB65R110CFDA	Infineon(英飞凌)	2602+	PG-TO263-3	6229	只做原装现货假一罚十!价格最低!只卖原装现货	询价
柒号芯城电子商务(深圳)有限公司	IPB65R110CFDA	INFINEON	2025+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市天芯威科技有限公司	IPB65R110CFDA	Infineon(英飞凌)	23+		25900	新到现货,只有原装	询价
深圳市中远芯科技有限公司	IPB65R110CFDA	INFINEON/英飞凌	22+	TO-263	2000	原装现货价格优势	询价

更多IPB65R110CFDA供应商更新时间2026-11-1 10:02:00

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