首页>IPB65R110CFD>规格书详情
IPB65R110CFD中文资料英飞凌数据手册PDF规格书
IPB65R110CFD规格书详情
描述 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
特性 Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
• Pb-free plating, Halogen free mold compound
Applications
650V CoolMOS CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCT TV, Lighting, Server, Telecom and Solar.
产品属性
- 型号：
IPB65R110CFD
- 功能描述：
MOSFET N-Channel MOSFET 650V 110 mOhm
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
TO-263 |
11543 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
Infineon/英飞凌 |
25+ |
PG-TO263 |
25000 |
原装正品,假一赔十! |
询价 | ||
INFINEON/英飞凌 |
19+ |
TO-263 |
680 |
询价 | |||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
Infineon(英飞凌) |
25+ |
TO-263 |
11543 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 | ||
INFINEON |
25+23+ |
TO-263 |
42318 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO263 |
6820 |
只做原装,质量保证 |
询价 | ||
INFINEON |
24+ |
TO-263 |
15000 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 |
