1200 V、15 A IGBT7 S7，带反并联二极管，采用 TO-247 封装

\n优势:\n• Lowest losses on IGBT, high system efficiency for higher power output\n• Higher power density without heatsink redesign\n• Fast and easy replacement of predecessor T2 portfolio\n• High device reliabiity in harsh operating condition\n• Ease to design to meet EMI requirement;

Infineon

英飞凌

IGBT 分立器件

High speed 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz\n • Low switching losses for high efficiency\n • Excellent VCEsatbehavior thanks to the famous Infineon TRENCHSTOP™ technology\n • Fast switching behavior with low EMI emissions\n • Optimized diode;

Infineon

英飞凌

1200 V、15 A IGBT 分立器件，带反并联二极管，采用 TO-247 封装

The 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitt • Lowest VCEsatdrop for lower conduction losses\n• Low switching losses\n• Easy parallel switching capability due to positive temperature coefficient in VCEsat\n• Very soft, fast recovery anti-parallel Emitter Controlled diode\n• High ruggedness, temperature stable behavior\n• Low EMI emissions\n• L;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：INDUSTRY 14 PG-TO247-3

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH/FS 1200V 30A TO247-3

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 30A 235W TO247-3

Infineon

英飞凌