丝印：IGW；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：G03H1202；Package：PG-TO-247-3-21；HighSpeed 2-Technology

• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight para

文件：396.67 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：G25H1203；Package：PG-TO247-3；IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic

文件：2.31905 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：G25T120；Package：PG-TO-247-3；Low Loss IGBT in TrenchStop짰 and Fieldstop technology

Low Loss IGBT in TrenchStop® and Fieldstop technology • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedne

文件：355.31 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30T100；Package：PG-TO247-3；Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCEsat - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat • Designed f

文件：802.72 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：G30T60；Package：PG-TO247-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distributio

文件：495.77 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G40H603；Package：PG-TO247-3；High speed IGBT in Trench and Fieldstop technology

Features: TRENCHSTOP™ technology offering • very low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

文件：1.70121 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：G50EH5；Package：PG-TO247-3；Highspeed5IGBTinTRENCHSTOPTM5technology

FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplati

文件：2.00184 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：G75H603；Package：PG-TO247-3；High speed switching series third generation

Features: TRENCHSTOP™ technology offering • very low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant • complete product spectrum and PSpice Models: http://www.i

文件：1.59173 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：G100H603；Package：PG-TO247-pin123；600V high speed switching series third generation

文件：2.04361 Mbytes 页数：14 Pages

Infineon

英飞凌