IGW40N60H3

分立式IGBT; • Low switching losses for high efficiency\n• Excellent VCE(sat)behavior thanks to the famous Infineon TRENCHSTOP™ technology\n• Fast switching behavior with low EMI emissions\n• Optimized diode for target applications, meaning further improvement in switching losses\n• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour\n• Short circuit capability 5µs\n• Offering Tj(max)of 175°C\n• Packaged with and without freewheeling diode for increased design freedom\n\n优势:\n• Low switching and conduction losses\n• Very good EMI behavior\n• Can be used with a small gate resistor for reduced delay time and voltage overshoot\n• High current density\n• Best-in-class 600 V IGBT efficiency and EMI behavior\n;

High speed 600 V, 40 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.\n

IGW40N60H3

丝印：G40H603；Package：PG-TO247-3；High speed IGBT in Trench and Fieldstop technology

Features: TRENCHSTOP™technologyoffering •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

IGW40N60H3FKSA1

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 306W TO247-3

IKW40N60H3

TrenchField-StopIGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.4V@VGE=15V,IC=40A ·LowEMI ·Verysoft,fastrecoveryanti-paralleldiode APPLICATIONS ·UninterruptedPowerSupply ·SolarConverters ·WeldingConverters ·HighVoltageAuxiliaries

IKW40N60H3

Highspeedswitchingseriesthirdgeneration