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型号	下载订购	功能描述	制造商上传企业	LOGO
IC61LV25616-10B	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-10BI	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-10K	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-10KI	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-10T	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-10TI	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-12B	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-12BI	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-12K	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI
IC61LV25616-12KI	文件：194.68 Kbytes Page：11 Pages	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ICSI IC61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power co 文件：194.68 Kbytes 页数：11 Pages	ICSI	ICSI

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供应商	型号	品牌	批号	封装	库存	备注	价格
上海凌岳电子科技有限公司（上海涵恩科技）	IC6043S		2023+	DIP	3000	进口原装现货	询价
贸泽芯城（深圳）电子科技有限公司	IC609-0204-005-G	YAMAICHI	23+		20000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
艾睿（深圳）半导体有限公司	IC610-3240-591-B	YAMAICHI	2447	NA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市联世界科技有限公司	IC61-0804-046	YAMAICHI	24+/25+		15	原装正品现货库存价优	询价
深圳市赛尔通科技有限公司	IC611004051	RENESAS	23+		65480		询价
深圳市星佑电子有限公司	IC611V2.5	NEC	00+		84	全新原装100真实现货供应	询价
上海金庆电子技术有限公司	IC6-136PFR-DSL-EJA-G	HRS-HIROSEELECTRIC	新		84	全新原装货期两周	询价
深圳市柯尔基电子有限公司	IC61C1024-10J	ICSI	23+24	SOJ-	9680	原盒原标.进口原装.支持实单 .价格优势	询价
深圳市美盛芯微电子有限公司	IC61C1024-10N	ICSI/ISSI	2025+	DIP	800		询价
齐创科技(上海,北京,青岛)有限公司	IC61C1024-12J	ICSI	23+	SC70-5	36000	原装正品,假一罚十	询价

更多IC6供应商更新时间2025-12-24 16:01:00

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