256K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

文件：252.29 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

文件：122.97 Kbytes 页数：9 Pages

ICSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61LV5128 is a very high-speed, low power, 524,288-word by 8-bit COMS static RAM. The IC61LV5128 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

文件：157.99 Kbytes 页数：9 Pages

ICSI