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IC61LV12816-10TI

128K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10B

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10BI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10K

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10KI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10T

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IS61LV12816-10B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10B

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10BI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10BI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10BI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10K

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10KI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10KI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10KI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

详细参数

  • 型号:

    IC61LV12816-10TI

  • 制造商:

    ICSI

  • 制造商全称:

    Integrated Circuit Solution Inc

  • 功能描述:

    128K x 16 Hight Speed SRAM with 3.3V

供应商型号品牌批号封装库存备注价格
ICSI
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ICSI
新年份
TSOP
3500
绝对全新原装现货,欢迎来电查询
询价
ISSI
22+
TSOP44
20000
保证原装正品,假一陪十
询价
ICSI
23+
TSSOP44
50000
全新原装正品现货,支持订货
询价
ICSI
2022
TSSOP44
80000
原装现货,OEM渠道,欢迎咨询
询价
ISSI
2017+
2005PB
25896
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
ISSI
2005PB
BGA
344
询价
SI
23+
QFN
2125
优势库存
询价
ISSI
17+
BGA
9888
全新进口原装,现货库存
询价
LATTICE
23+
NA
6500
全新原装假一赔十
询价
更多IC61LV12816-10TI供应商 更新时间2024-5-1 9:01:00