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IC61LV12816-10KI

128K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10B

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10BI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10K

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10T

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-10TI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IS61LV12816-10B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10B

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10BI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10BI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10BI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10K

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10KI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-10KI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10KI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-10LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

详细参数

  • 型号:

    IC61LV12816-10KI

  • 制造商:

    ICSI

  • 制造商全称:

    Integrated Circuit Solution Inc

  • 功能描述:

    128K x 16 Hight Speed SRAM with 3.3V

供应商型号品牌批号封装库存备注价格
ICSI
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ICSI
22+
TSOP
4500
原装正品!公司现货!欢迎来电!
询价
ICSI
2022
TSOP44
8800
原厂原装正品,价格超越代理
询价
ICSI
2017+
TSSOP
52145
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
ICSI
2339+
TSOP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ICSI
2016+
TSOP
6528
只做进口原装现货!或订货,假一赔十!
询价
Lattice
23+
QFP-128
6500
全新原装假一赔十
询价
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!
询价
23+
N/A
45980
正品授权货源可靠
询价
ICSI
23+
TSOP
20000
原厂原装正品现货
询价
更多IC61LV12816-10KI供应商 更新时间2024-5-1 9:01:00