64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：452.42 Kbytes 页数：8 Pages

ICSI

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：452.42 Kbytes 页数：8 Pages

ICSI

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as

文件：146.94 Kbytes 页数：16 Pages

ISSI

矽成半导体