IS61LV6416-12BI中文资料北京矽成数据手册PDF规格书

DESCRIPTION

The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

FEATURES

• High-speed access time: 8, 10, 12 ns

• CMOS low power operation

— 61LV6416: 75 mW (typical) operating current 0.5 mW (typical) standby current

— 61LV6416L: 65 mW (typical) operating current 50 µW (typical) standby current

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available