256K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

文件：252.29 Kbytes 页数：9 Pages

ICSI

256K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe

文件：252.29 Kbytes 页数：9 Pages

ICSI

256K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe

文件：88.68 Kbytes 页数：8 Pages

ISSI

矽成半导体

256K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe

文件：45.22 Kbytes 页数：9 Pages

ISSI

矽成半导体

256K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe

文件：45.22 Kbytes 页数：9 Pages

ISSI

矽成半导体