STI14NM50N

Marking：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

STI16N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

STI30N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=22A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

STI32N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=22A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=148mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

STI34N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=28A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp

STI35N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(I2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switching

STI42N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

STI57N65M5

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(I2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

STI8N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

STTH2003CR

Marking：I2PAK；Package：TO-262；Ultra fast Rectifier

FEATURES •WithTO-262(I2PAK)packaging •Lowleakagecurrent,lowpowerloss,highefficiency •Highfrequencyoperation •Highcurrentcapability •Lowstoredchargemajoritycarrierconduction •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIO