AOW7S65

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=7.0A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max) •100avalanchetested •MinimumLot-to-L

IPI50R199CP

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

IPI60R190C6

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

IPI60R380C6

Marking：I2PAK；Package：TO-262；nullIsc N-Channel MOSFET Transistor

•FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

SIHFBC40L

Marking：I2PAK；Package：TO-262；iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=1.2Ω(MAX) •Enhancementmode: Vth=2to4V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPI20N60C3

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

STB11NM60FD-1

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

STI11NM60ND

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=6.3A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchinga

STI12N65M5

Marking：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

•FEATURES •DrainCurrentID=8.5A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

STI13NM60N

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

•FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max) •100avalanchetested •Lowinputcapacitanceandgatecharge •MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia