首页 >HT-210USD/UYG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETinaHermeticallysealedTO39 N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=200V ID=2.25A RDS(ON)=1.5Ω | SEME-LAB Seme LAB | SEME-LAB | ||
2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?쏷RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.96A) VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SurfaceMount | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFET짰PowerMOSFET VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET(200V,1.5ohm,0.77A) FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A) DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
HT-210USD/UYG
- 制造商：
Harvatek Corporation
- 功能描述：
LED Bi-Color Blue/Orange 636nm/574nm 2-Pin Chip LED
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARVATEK |
20+ |
LED |
83000 |
LED原装优势主营型号-可开原型号增税票 |
询价 | ||
HARVATEK |
21+ |
65200 |
询价 | ||||
HARVATEK |
LED |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
HARVATE |
23+ |
LED |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
HARVATEK |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
HARVATEK |
24+25+/26+27+ |
车规-光电器件 |
43788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
HARVATEK |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
HARVATEK |
24+ |
LED |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
HARVATEK |
2402+ |
LED |
8324 |
原装正品!实单价优! |
询价 | ||
22+ |
BGA6 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 |
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