PNP SILICON TRANSISTOR

APPLICATIONS Color TV Chroma Output Applications

文件：105.41 Kbytes 页数：1 Pages

HUASHAN

华汕电子器件

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications.

文件：23.15 Kbytes 页数：2 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Audio frequency power amplifier, high frequency power amplifier.

文件：33.6 Kbytes 页数：3 Pages

HSMC

华昕

Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：24.26 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode

Features ● High forward current, Low capacitance. ● Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：31.78 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：141.93 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：20.86 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Features • Low forward resistance. (rf = 0.7 max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：26.65 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Features • Low forward resistance. (rf = 0.7 Ω max) • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：75.23 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

Features • Low forward voltage, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：71.6 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司