High Temperature and Large Size Multilayer Ceramic Chip Capacitors

文件：219.68 Kbytes 页数：4 Pages

HOLYSTONECAPS

禾伸堂

HEAT SINK CLIP

FEATURES • for use with HSE-B20X and HSE-B20X-01 series • stainless steel • clean finish

文件：168.72 Kbytes 页数：2 Pages

SAMESKY

HEAT SINK CLIP

FEATURES • for use with HSE-BX-035H series • stainless steel • clean finish

文件：178.45 Kbytes 页数：2 Pages

SAMESKY

HEAT SINK CLIP

FEATURES • for use with HSE-BX-035H series • stainless steel • clean finish

文件：172.85 Kbytes 页数：2 Pages

SAMESKY

HEAT SINK CLIP

FEATURES • for use with HSE-B20X and HSE-B20X-01 series • stainless steel • clean finish

文件：164.74 Kbytes 页数：2 Pages

SAMESKY

丝印：HSC04065AC；Package：TO-220；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：361.15 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

丝印：HSC04065D；Package：TO-252；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：369.73 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

丝印：HSC04065F；Package：TO-220F；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：563.02 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

HEAT SINK CLIP

FEATURES • clip for HSS01-B20-CP • stainless steel • clean finish

文件：171.35 Kbytes 页数：2 Pages

SAMESKY

丝印：HSC05120AC；Package：TO-220；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：369.9 Kbytes 页数：4 Pages

HUIXIN

慧芯电子