Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

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HITACHIHitachi Semiconductor

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Silicon Schottky Barrier Diode

Features ● High forward current, Low capacitance. ● Ultra small Flat Package (UFP) is suitable for surface mount design.

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HSC276_03

文件：61.56 Kbytes 页数：5 Pages

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Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：141.93 Kbytes 页数：5 Pages

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Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：20.86 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

HSC276_03

文件：61.56 Kbytes 页数：5 Pages

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