Silicon Schottky Barrier Diode for Detector

Silicon Schottky Barrier Diode for Detector Features • Low forward voltage, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：142.27 Kbytes 页数：5 Pages

RENESAS

瑞萨

SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION

Features • Low forward voltage, Low capacitance and High detection sensitivity. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：46.08 Kbytes 页数：5 Pages

RENESAS

瑞萨

Aluminium Housed Power Resistors

TE Connectivity are the leading European supplier of standard and custom designed aluminium housed resistors for general-purpose use, power supplies, power generation and the traction industry. The HS is a range of extremely stable, high quality wire wound resistors capable of dissipating high pow

文件：180.16 Kbytes 页数：4 Pages

TEC

泰科电子

Aluminium Housed Power Resistors

Key Features ■ Established product with proven reliability • Leading the way with over 50 years of design and manufacturing experience ■ 5 Watts to 300 Watts (500 Watt and 1000 Watt versions available) • Largest range on the market ■ Versatile product • Bench mark in every industry

文件：179.84 Kbytes 页数：4 Pages

TEC

泰科电子

丝印：HSC30120K；Package：TO-247-3L；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：432.41 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

NPN EPITAXIAL PLANAR TRANSISTOR

Features • High–Definition CRT Display Video Output Applications • High Breakdown Voltage: BVCEO=300V

文件：34.11 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description High–definition CRT display video output, wide-band amplifier. Features • High fT: 500MHz • High Breakdown Voltage: BVCEO=120Vmin • Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF

文件：33.86 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description High-definition CRT display video output, wide-band amplifier applications. Features • High fT: fT=500MHz • High breakdown voltage: VCEO=120V min • Small reverse transfer capacitance

文件：35.32 Kbytes 页数：3 Pages

HSMC

华昕

丝印：HSC40065K；Package：TO-247-3L；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：398.15 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.

文件：32.65 Kbytes 页数：3 Pages

HSMC

华昕