Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

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High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

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Soft Recovery Behaviour High-Performance Ultra Fast Recovery Epitaxial Diodes

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High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

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