1U Compute Sled for HTCA-E400

Features • Support 3rd Gen Intel Xeon Scalable Processor (codenamed Ice lake) • Front Access I/O: Storage bays x2, PCIe x1, NIC slot x1, mini-DP port VGA signal), LOM and USB 3.0 ports • Support FHHL PCIe by 16 card • Support OCP NIC 3.0 Modules • Compatible with HTCA-E400 Series

文件：593.66 Kbytes 页数：1 Pages

LANNER

立端科技

Carrier-grade Edge Server Chassis for Open RAN / MEC

Features • Carrier-grade, full redundancy and extreme high performance • 3rd Generation Intel® Xeon® Scalable Processor with AI Acceleration • Support 5x 1U compute sleds or 2x 2U+1U compute sleds • Support 2x 1U switch sleds for redundancy • Support OCP NIC 3.0 Modules, 2U sled Support FH3/4

文件：3.14534 Mbytes 页数：2 Pages

LANNER

立端科技

2U Compute Sled for HTCA-E400

Features • Support 3rd Gen Intel Xeon Scalable Processor (codenamed Ice lake) • Front Access I/O: Storage bays x4, PCIe x1, NIC slot x1, mini-DP port (VGA signal), LOM and USB 3.0 ports • Support FH3/4L double width or single width PCIe Card • Support OCP NIC 3.0 Modules • Compatible with HT

文件：506.66 Kbytes 页数：1 Pages

LANNER

立端科技

2U Compute Sled for HTCA-E400

Features • Support 3rd Gen Intel Xeon Scalable Processor (codenamed Ice lake) • Front Access I/O: Storage bays x4, PCIe x1, NIC slot x1, mini-DP port (VGA signal), LOM and USB 3.0 ports • Support FH3/4L double width or single width PCIe Card • Support OCP NIC 3.0 Modules • Compatible with HT

文件：506.66 Kbytes 页数：1 Pages

LANNER

立端科技

Carrier-grade Edge Server Chassis for Open RAN / MEC

Features • Carrier-grade, full redundancy and extreme high performance • 3rd Generation Intel® Xeon® Scalable Processor with AI Acceleration • Support 5x 1U compute sleds or 2x 2U+1U compute sleds • Support 2x 1U switch sleds for redundancy • Support OCP NIC 3.0 Modules, 2U sled Support FH3/4

文件：3.14534 Mbytes 页数：2 Pages

LANNER

立端科技

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

文件：31.54 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.

文件：32.28 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. Features • High frequency current gain • High Speed Switching

文件：37.05 Kbytes 页数：4 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMBT2369 is designed for general purpose switching and amplifier applications. Features • Low Collector Saturation Voltage • High speed switching Transistor

文件：30.31 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description Low Noise Transistor.

文件：26.34 Kbytes 页数：3 Pages

HSMC

华昕