| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HM64 | PNP EPITAXIAL PLANAR TRANSISTOR Description The HM64 is a darlington amplifier transistor designed for applications requiring extremely high current gain. Features • High D.C current gain • HM64 is complementary to HM14 文件:30.83 Kbytes 页数:3 Pages | HSMC 华昕 | HSMC | |
HM64 | Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 页数:2 Pages | BITECH | BITECH | |
the silicon N-channel Enhanced VDMOSFETs Description HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization 文件:935.87 Kbytes 页数:10 Pages | HMSEMI 华之美半导体 | HMSEMI | ||
丝印:6408;Package:SOT-23-6L;N-Channel Enhancement Mode Power MOSFET Description The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID = 5.5A RDS(ON) 文件:1.1278 Mbytes 页数:7 Pages | HMSEMI 华之美半导体 | HMSEMI | ||
丝印:6409;Package:SOT-23-6L;P-Channel Enhancement Mode Power MOSFET Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON) 文件:1.0131 Mbytes 页数:7 Pages | HMSEMI 华之美半导体 | HMSEMI | ||
20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions 文件:344.16 Kbytes 页数:3 Pages | HMSEMI 华之美半导体 | HMSEMI | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 页数:2 Pages | BITECH | BITECH | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 页数:2 Pages | BITECH | BITECH | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 页数:2 Pages | BITECH | BITECH | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 页数:2 Pages | BITECH | BITECH |
技术参数
- 封装(Package):
TO-220
- 沟道(Polarity):
N沟道
- VDS(Max)BVDSS(V):
200.00V
- ID(Max)ID(A):
18.00A
- IDM:
72.00A
- VTH(Typ):
3.00V
- VGS:
30.00V
- RDS(ON)@-10VTyp(mΩ):
0.12mΩ
- RDS(ON)@-4.5VTyp(mΩ):
0.00mΩ
- RDS(ON)@-2.5VTyp(mΩ):
0.00mΩ
- 直接替代型号(compatible):
IRF640
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
02+ |
QFP48 |
2245 |
全新原装进口自己库存优势 |
询价 | ||
HIT |
24+ |
QFP |
153 |
询价 | |||
HIT |
25+ |
QFP |
2309 |
品牌专业分销商,可以零售 |
询价 | ||
H |
24+ |
TO-220AB |
5000 |
只做原装公司现货 |
询价 | ||
HIT |
17+ |
QFP48 |
9988 |
只做原装进口,自己库存 |
询价 | ||
HIT |
25+ |
SIP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
BGA |
110 |
询价 | |||||
HZM |
24+ |
SOT26 |
326295 |
专业代理LDO稳压IC公司优势产品 |
询价 | ||
RENESAS/瑞萨 |
2447 |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
HM |
24+ |
SOT-23-6L |
9600 |
原装现货,优势供应,支持实单! |
询价 |
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