HM640

the silicon N-channel Enhanced VDMOSFETs

Description HM640,thesiliconN-channelEnhancedVDMOSFETs,isobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancetheavalancheenergy.Thetransistorcanbeusedinvariouspowerswitchingcircuitforsystemminiaturization

HM6408

Marking：6408；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)

HM6409

Marking：6409；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description TheHM6409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features ●VDS=-20V,ID=-5.0A RDS(ON)

HM6409AE

20V P-Channel Enhancement-Mode MOSFET

VDS=-20V RDS(ON),Vgs@-1.8V,Ids@-2.0A=73mΩ RDS(ON),Vgs@-2.5V,Ids@-4.0A=54mΩ RDS(ON),Vgs@-4.5V,Ids@-5.5A=43mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance PackageDimensions

HSMA-L640

SurfaceMountLensedChipLEDs

HSMC-L640

SurfaceMountLensedChipLEDs

HSMG-L640

SurfaceMountLensedChipLEDs

HSMH-L640

SurfaceMountLensedChipLEDs

HT640

3(18)SeriesofEncoders

GeneralDescription The318decodersareaseriesofCMOSLSIsforremotecontrolsystemapplications.Theyare pairedwiththe318seriesofencoders.Forproperoperationapairofencoder/decoderpair withthesamenumberofaddressanddataformatshouldbeselected(refertotheenco

HT640-S

CMOSLSIforremotecontrolsystemapplications