the silicon N-channel Enhanced VDMOSFETs

Description HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

文件：935.87 Kbytes 页数：10 Pages

HMSEMI

华之美半导体

高压MOS

HmpowerSemi

虹美功率

丝印：6408；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID = 5.5A RDS(ON)

文件：1.1278 Mbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：6409；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON)

文件：1.0131 Mbytes 页数：7 Pages

HMSEMI

华之美半导体

20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

文件：344.16 Kbytes 页数：3 Pages

HMSEMI

华之美半导体

N沟道 低压MOS

HmpowerSemi

虹美功率

P沟道 低压MOS

HmpowerSemi

虹美功率