20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

文件：344.16 Kbytes 页数：3 Pages

HMSEMI

华之美半导体

RF POWER TRANSISTOR NPN SILICON

文件：273.62 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Unijunction Transistor

Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 2µA Max Low Emitter Reverse Current: 200nA Max Passivated Surface for Reliability & Uniformity Absolute Maximum Rating

文件：20.73 Kbytes 页数：2 Pages

NTE

3 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

文件：227.62 Kbytes 页数：5 Pages

TI

德州仪器