1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

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1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil