丝印：6409；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON)

文件：1.0131 Mbytes 页数：7 Pages

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20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

文件：344.16 Kbytes 页数：3 Pages

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High Intensity Infrared Source Several lamps in our MR11 and MR 16 series are now available with gold coated reflectors. This layer of gold provides for increased emission in the infrared. Applications include open field IR gas detection, local infrared heating and remote testing of flame detect

文件：44.63 Kbytes 页数：1 Pages

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文件：439.62 Kbytes 页数：24 Pages

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文件：432.85 Kbytes 页数：24 Pages

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