NPN EPITAXIAL PLANAR TRANSISTOR

Description The HM44 is designed for application requires high voltage. Features • High voltage: VCEO=400V(min) at IC=1mA • High current gain: IC=300mA at 25°C • Complementary with HM94

文件：30.7 Kbytes 页数：3 Pages

HSMC

华昕

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：1.97966 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch CASE SO-8

文件：1.99613 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：HM4402B；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

文件：627.72 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM4402C；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

文件：470.91 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM4404；Package：SOP8；N-Channel Enhancement Mode Power MOSFET

文件：678.97 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

丝印：4406A；Package：SOP-8；30V N-Channel Enhancement-Mode MOSFET

文件：403.02 Kbytes 页数：3 Pages

HMSEMI

华之美半导体

丝印：HM4407A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

文件：579.04 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

丝印：HM4410A；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

文件：613.93 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

130mW non-output capacito stereo class G headphone amplifier

文件：3.56318 Mbytes 页数：14 Pages

HMSEMI

华之美半导体