HM4410A数据表ic资料市场行情虹美功率-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HM4410A	文件：613.93 Kbytes Page：7 Pages	丝印：HM4410A；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET 文件：613.93 Kbytes 页数：7 Pages	HMSEMI 华之美半导体	HMSEMI
HM4410A	文件：300 bytes Page：1 Pages	N沟道低压MOS	HmpowerSemi 虹美功率	HmpowerSemi
HM4410T	文件：3.56318 Mbytes Page：14 Pages	130mW non-output capacito stereo class G headphone amplifier 文件：3.56318 Mbytes 页数：14 Pages	HMSEMI 华之美半导体	HMSEMI
HP4410	文件：151.33 Kbytes Page：6 Pages	10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo 文件：151.33 Kbytes 页数：6 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HP4410	文件：82.34 Kbytes Page：5 Pages	10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo 文件：82.34 Kbytes 页数：5 Pages	INTERSIL	INTERSIL

封装（Package）：
SOP8
沟道（Polarity）：
N沟道
VDS(Max)BVDSS(V)：
30.00V
ID(Max)ID(A)：
12.00A
IDM：
48.00A
VTH(Typ)：
1.50V
VGS：
20.00V
RDS(ON)@-10VTyp(mΩ)：
6.60mΩ
RDS(ON)@-4.5VTyp(mΩ)：
9.60mΩ
RDS(ON)@-2.5VTyp(mΩ)：
0.00mΩ
直接替代型号（compatible）：
AO4410/AO4403/APM4410IRF7805Z/CEM4410/AP4410/FDS4410/IRF7832

更多HM4410A供应商更新时间2026-4-17 11:02:00