130mW non-output capacito stereo class G headphone amplifier

文件：3.56318 Mbytes 页数：14 Pages

HMSEMI

华之美半导体

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：151.33 Kbytes 页数：6 Pages

Fairchild

仙童半导体

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：82.34 Kbytes 页数：5 Pages

Intersil

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：151.33 Kbytes 页数：6 Pages

Fairchild

仙童半导体