10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：151.33 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：82.34 Kbytes 页数：5 Pages

Intersil

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

ONSEMI

安森美半导体

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：82.34 Kbytes 页数：5 Pages

Intersil

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：151.33 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low • Logic Level Gate Drive\n• 10A, 30V\n• rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V\n• rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

ONSEMI

安森美半导体