丝印：4406A；Package：SOP-8；30V N-Channel Enhancement-Mode MOSFET

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HMSEMI

华之美半导体

30V N-Channel MOSFET

General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID(at VGS=10V) 13A RDS(ON)(at VGS=10V)

文件：333.74 Kbytes 页数：6 Pages

AOSMD

万国半导体