HIP6602CB-T资料datasheet下载批发供应第2页-114ic电子网

首页 >HIP6602CB-T>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CJL6602	文件：2.89085 Mbytes Page：6 Pages	P-channelandN-channelComplementaryMOSFETS	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CPH6602	文件：44.91 Kbytes Page：4 Pages	CPH6602	SANYOSanyo 三洋三洋电机株式会社	SANYO
DMG6602SVT	文件：272.05 Kbytes Page：10 Pages	COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET	DIODESDiodes Incorporated 达尔科技	DIODES
DMG6602SVT	文件：1.1316 Mbytes Page：10 Pages	N-andP-ChannelV(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
DMG6602SVTQ	文件：561.23 Kbytes Page：10 Pages	COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET	DIODESDiodes Incorporated 达尔科技	DIODES
EFC6602R	文件：421.4 Kbytes Page：8 Pages	Lithium-ionbatterycharginganddischargingswitch N-ChannelSiliconMOSFETLithium-ionbatterycharginganddischargingswitch Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance	SANYOSanyo 三洋三洋电机株式会社	SANYO
EFC6602R	文件：755.32 Kbytes Page：6 Pages	PowerMOSFET N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
EFC6602R	文件：323.53 Kbytes Page：8 Pages	N-ChannelPowerMOSFET12V,18A,5.9m廓,DualEFCP N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
EFC6602R-TR	文件：755.32 Kbytes Page：6 Pages	PowerMOSFET N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
EFC6602R-TR	文件：323.53 Kbytes Page：8 Pages	N-ChannelPowerMOSFET12V,18A,5.9m廓,DualEFCP N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
FAN6602R	文件：1.58003 Mbytes Page：19 Pages	HighlyIntegratedGreen-ModePWMController	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
FTK6602	文件：516.549 Kbytes Page：5 Pages	P-channelandN-channelComplementaryMOSFETS	FS First Silicon Co., Ltd	FS
HIP6602	文件：516.36 Kbytes Page：9 Pages	DualChannelSynchronous-RectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •5Vto12VGate-DriveVoltagesforOptimalEfficiency •Three-State	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HIP6602	文件：207.98 Kbytes Page：9 Pages	DualChannelSynchronous-RectifiedBuckMOSFETDriver TheHIP6602isahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronous-rectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxseriesofMulti-PhaseBuckPWMcontrollerandIntersil’sUltraFETs®formacomplete	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HIP6602A	文件：250.16 Kbytes Page：10 Pages	DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage.	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HIP6602A	文件：602.39 Kbytes Page：10 Pages	DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HIP6602ACB	文件：602.39 Kbytes Page：10 Pages	DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HIP6602ACB	文件：250.16 Kbytes Page：10 Pages	DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage.	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HIP6602ACB-T	文件：250.16 Kbytes Page：10 Pages	DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage.	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HIP6602ACB-T	文件：602.39 Kbytes Page：10 Pages	DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

<<<123 4 5 6 7 >>>

详细参数

型号：
HIP6602CB-T
制造商：
Rochester Electronics LLC
功能描述：
- Tape and Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市博正芯科技有限公司	HIP6602CB-T	Intersil	21+	NA	12000	正品专卖,进口原装深圳现货	询价
深圳市冠亿通科技有限公司	HIP6602CB-T	Inters	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市一线半导体有限公司	HIP6602CBZ	INTERSIL	06+07+	SOP14	10		询价
齐创科技(上海,北京,青岛)有限公司	HIP6602CBZ	INTERSIL	23+	SOP14	5000	原装正品,假一罚十	询价
绿盛电子(香港)有限公司	HIP6602QI	HAR	2018+	SOP	26976	代理原装现货/特价热卖!	询价
深圳市金胜达微科技有限公司	HIP6602QI	HAR	21+	SOP	100000	原厂订货价格优势,可开13%的增值税票	询价
深圳市昌源伟业科技有限公司	HIP6603	HARRIS	15+	SOP8	100	全新原装正品现货	询价
深圳市勤思达科技有限公司	HIP6603	HIP	23+	SOP8	1947		询价
深圳市佳鑫美电子科技有限公司	HIP6603	HARRIS	22+	SMD-8	3200	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市星佑电子有限公司	HIP6603	HIP	05+	原厂原装	7301	只做全新原装真实现货供应	询价

更多HIP6602CB-T供应商更新时间2024-5-28 10:02:00

详细参数

相关规格书

相关库存