HGTP3N60C3中文资料6A, 600V, UFS Series N-Channel IGBTs数据手册ONSEMI规格书

描述 Description

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

特性 Features

• 6A, 600V at TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”