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型号	下载订购	功能描述	制造商上传企业	LOGO
HGTD1N120BNS	文件：96.46 Kbytes Page：8 Pages	5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct 文件：96.46 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HGTD1N120BNS	文件：71.96 Kbytes Page：7 Pages	5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct 文件：71.96 Kbytes 页数：7 Pages	INTERSIL	INTERSIL
HGTD1N120BNS	文件：312.88 Kbytes Page：2 Pages	Trench Field-Stop Technology IGBT DESCRIPTION · Fast switching · Low Switching Losses APPLICATIONS · AC and DC motor controls · Power · Lighting 文件：312.88 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
HGTD1N120BNS	文件：97.6 Kbytes Page：8 Pages	5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct 文件：97.6 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HGTD1N120BNS9A	文件：96.46 Kbytes Page：8 Pages	5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct 文件：96.46 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HGTD1N120BNS	文件：300 bytes Page：1 Pages	IGBT，1200V，NPT HGTD1N120BNS9A 基于非穿通 (NPT) IGBT 设计。该 IGBT 非常适合许多工作频率中等，而低传导损耗又至关重要的高压开关应用，如 UPS、太阳能逆变器、电机控制和电源。 •2.7 A，1200 V，需 TC = 110°C\n•低饱和电压：VCE(sat) = 2.5 V，需 IC = 1.0 A\n•典型下降时间 TJ = 150°C时为258ns\n•短路额定值\n•低传导损耗;	ONSEMI 安森美半导体	ONSEMI
HGTD1N120BNS	文件：300 bytes Page：1 Pages	5.3A, 1200V, NPT Series N-Channel IGBT	Renesas 瑞萨	Renesas
HGTD1N120BNS9A	文件：100 bytes Page：1 Pages	Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 1200V 5.3A 60W TO252AA	ONSEMI 安森美半导体	ONSEMI

技术参数

Pb-free：
Pb
Status：
Active
V(BR)CES Typ (V)：
1200
IC Max (A)：
2.7
VCE(sat) Typ (V)：
2.5
Eoff Typ (mJ)：
0.09
Eon Typ (mJ)：
0.07
Gate Charge Typ (nC)：
14
Short Circuit Withstand (µs)：
8
EAS Typ (mJ)：
10
PD Max (W)：
60
Co-Packaged Diode：
No
Package Type：
DPAK-3/TO-252-3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	HGTD1N120BNS	FAIRCHIL	24+	TO-252	8866		询价
芯有半导体（深圳）有限公司	HGTD1N120BNS	INTERSIL	05+	原厂原装	4735	只做全新原装真实现货供应	询价
深圳市勤思达科技有限公司	HGTD1N120BNS	FAIRC	12+	TO-252(DPAK)	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市赛尔通科技有限公司	HGTD1N120BNS	FAI	23+		65480		询价
深圳市威尔健半导体有限公司	HGTD1N120BNS	INFINEON/英飞凌	23+	TO-263	69820	终端可以免费供样,支持BOM配单!	询价
深圳市河锋鑫科技有限公司	HGTD1N120BNS	FAIRCHILD	22+	TO-252-2	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	HGTD1N120BNS	INTERSIL	23+	TO-252TO-251	64644	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市华来深电子有限公司	HGTD1N120BNS	FAIRCHI	23+	TO-252	8560	受权代理!全新原装现货特价热卖!	询价
深圳市安富世纪电子有限公司	HGTD1N120BNS	FAIRCHILD/仙童	23+	TO-252(DPAK)	8400	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	HGTD1N120BNS	FSC	26+	TO-252(DP	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价

更多HGTD1N120BNS供应商更新时间2026-9-26 16:30:00

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