32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

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32A, 600V N-Channel IGBT

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32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

文件：33.3 Kbytes 页数：4 Pages

INTERSIL

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