Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C.

IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

This device incorporates generation two design techniques which yield improved peak current capability and larger short circuit withstand capability than previous designs.

Features

• 32A, 600V

• Latch Free Operation

• Typical Fall Time - 600ns

• High Input Impedance

• Low Conduction Loss