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HGT1S3N60A4DS	文件：113.52 Kbytes Page：9 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGT1S3N60A4DS	文件：130.32 Kbytes Page：10 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGT1S3N60A4DS9A	文件：113.52 Kbytes Page：9 Pages	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGT1S3N60A4S	文件：156.22 Kbytes Page：10 Pages	600V, SMPS Series N-Channel IGBT TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGT1S3N60B3DS	文件：154.31 Kbytes Page：7 Pages	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTP3N60B3DandHGT1S3N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedropv	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGT1S3N60B3S	文件：141.53 Kbytes Page：7 Pages	7A, 600V, UFS Series N-Channel IGBTs TheHGTD3N60B3S,HGT1S3N60B3SandHGTP3N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGT1S3N60C3D	文件：327.17 Kbytes Page：7 Pages	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch	HARRIS HARRIS corporation	HARRIS
HGT1S3N60C3DS	文件：327.17 Kbytes Page：7 Pages	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch	HARRIS HARRIS corporation	HARRIS
HGT1S3N60C3DS	文件：273.87 Kbytes Page：7 Pages	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGT1S3N60C3D	文件：394.42 Kbytes Page：11 Pages	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	HARRIS HARRIS corporation	HARRIS
HGT1S3N60C3DS	文件：394.42 Kbytes Page：11 Pages	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	HARRIS HARRIS corporation	HARRIS

详细参数

型号：
HGT1S3N60
功能描述：
IGBT 晶体管 TO-263
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集电极—发射极最大电压
VCEO：
650 V
集电极—射极饱和电压：
2.3 V
栅极/发射极最大电压：
20 V 在25
C的连续集电极电流：
150 A
栅极—射极漏泄电流：
400 nA
功率耗散：
187 W
封装/箱体：
TO-247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	HGT1S3N60A4DS	INTERSIL	23+	TO-263	12300	全新原装真实库存含13点增值税票!	询价
深圳市星佑电子有限公司	HGT1S3N60A4DS	INTERSIL	05+	原厂原装	4435	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	HGT1S3N60A4DS	Intersil	08+(pbfree)	TO-263	8866		询价
深圳市鹏和科技有限公司	HGT1S3N60A4DS	FAIRCHIL	24+	TO-263	5000	全现原装公司现货	询价
深圳市永贝尔科技有限公司	HGT1S3N60A4DS	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
瀚佳科技(深圳)有限公司	HGT1S3N60A4DS	INTERSIL	21+		35200	一级代理/放心采购	询价
深圳兆威电子有限公司	HGT1S3N60A4DS	INTERSIL	23+	TO-263	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市汇莱威科技有限公司	HGT1S3N60A4DS	FAIRCHILD/仙童		TO-263	265209	假一罚十原包原标签常备现货!	询价
深圳市国宇半导体科技有限公司	HGT1S3N60A4DS	INTERSIL	23+	TO-263	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	HGT1S3N60A4DS	FAIRCHILD/仙童	23+	TO-263	50000	全新原装正品现货,支持订货	询价

更多HGT1S3N60供应商更新时间2024-6-24 15:30:00

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