HGT1S3N60C3D中文资料HARRIS数据手册PDF规格书

描述 Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

特性 Features

• 6A, 600V at TC = +25°C

• 600V Switching SOA Capability

• Typical Fall Time - 130ns at TJ = +150°C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode