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IRF1405S

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405SLPBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技

IRF1405SPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405SPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1405Z

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZL

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZLPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405PPBF

HEXFET짰PowerMOSFET

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingleand

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405PPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP1405

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP1405

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP1405PBF

HEXFET짰PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    HCS1405A

  • 制造商:

    JLWORLD

  • 制造商全称:

    JLWORLD

  • 功能描述:

    Electro-Magnetic Sound Generators

供应商型号品牌批号封装库存备注价格
H
23+
CDIP
66800
原装正品专营军工
询价
H
21+ROHS
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10000
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H
21+
CDIP
645
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H
QQ咨询
CDIP
70
全新原装 研究所指定供货商
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2318+
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4862
只做进口原装!假一赔百!自己库存价优!
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HAR
05+
原厂原装
4340
只做全新原装真实现货供应
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ISL
23+
65480
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H
0347+
CDIP
1
全新原装,支持实单,假一罚十,德创芯微
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Renesas Electronics
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
H
18
CDIP
200
进口原装正品优势供应QQ3171516190
询价
更多HCS1405A供应商 更新时间2024-5-17 17:11:00