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IHW30N110R3

Marking:H30R1103;Package:PG-TO247-3;Reverse conducting IGBT with monolithic body diode

Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •LowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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