丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器