丝印：H34R；Package：SOT-23(DBV)；SN74AUP1G34 Low-Power Single Buffer Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption; ICC = 0.9 μA Max • Low Dynamic-Power Consumption; Cpd = 4.1 pF Typ at 3.3 V • Low Input Capacitance; Ci = 1.5 pF Typ • Low Noise - Overshoot and Undershoot

文件：2.39197 Mbytes 页数：44 Pages

TI

德州仪器

丝印：H34R；Package：SOT-23(DBV)；SN74AUP1G34 Low-Power Single Buffer Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption; ICC = 0.9 μA Max • Low Dynamic-Power Consumption; Cpd = 4.1 pF Typ at 3.3 V • Low Input Capacitance; Ci = 1.5 pF Typ • Low Noise - Overshoot and Undershoot

文件：2.39197 Mbytes 页数：44 Pages

TI

德州仪器

丝印：H34R；Package：SOT-23(DBV)；SN74AUP1G34 Low-Power Single Buffer Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption; ICC = 0.9 μA Max • Low Dynamic-Power Consumption; Cpd = 4.1 pF Typ at 3.3 V • Low Input Capacitance; Ci = 1.5 pF Typ • Low Noise - Overshoot and Undershoot

文件：2.39197 Mbytes 页数：44 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器

丝印：H34R；Package：VSSOP；LOW-POWER TRIPLE BUFFER GATE

1FEATURES 2• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：809.92 Kbytes 页数：26 Pages

TI

德州仪器