丝印：H32R；Package：SOT-23(DBV)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H32R；Package：SOT-23(DBV)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H32R；Package：SOT-23(DBV)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H32R；Package：SOT-23(DBV)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H32R；Package：SOT-23(DBV)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H32R；Package：SOT-23(DBV)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features • Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch • Low static-power consumption (ICC = 0.9 μA Max) • Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low input capacitance (CI = 1.5 pF Typ) • Low noise – overshoot and undershoot

文件：2.78783 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H32R；Package：VSSOP(DCU)；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：821.71 Kbytes 页数：25 Pages

TI

德州仪器

丝印：H32R；Package：VSSOP；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：815.65 Kbytes 页数：25 Pages

TI

德州仪器

丝印：H32R；Package：VSSOP；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：815.65 Kbytes 页数：25 Pages

TI

德州仪器

丝印：H32R；Package：VSSOP(DCU)；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：821.71 Kbytes 页数：25 Pages

TI

德州仪器