丝印：H30KR5；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features • VCE = 1100 V • IC = 30 A • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, temperature stable behavior • Very low VCEsat • Easy parallel switching capability due to positive temperat

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