40V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：786.23 Kbytes 页数：5 Pages

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500V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

文件：1.38167 Mbytes 页数：6 Pages

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慧芯电子

500V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

文件：548.96 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

60V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • Motor Control

文件：487.01 Kbytes 页数：6 Pages

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慧芯电子

丝印：H30P4D；Package：TO-252；40V Single P-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Load Switch • PWM Applications • Power Managment

文件：963.2 Kbytes 页数：6 Pages

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慧芯电子

Reverse conducting IGBT with monolithic body diode

Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •LowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfo

文件：2.05032 Mbytes 页数：15 Pages

INFINEON

英飞凌

Reverse conducting IGBT with monolithic body diode

Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswit

文件：2.05144 Mbytes 页数：15 Pages

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英飞凌

TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution - hi

文件：396.65 Kbytes 页数：12 Pages

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英飞凌

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

文件：304 Kbytes 页数：12 Pages

INFINEON

英飞凌

Trench Gate IGBT

Features: • Very low Vce(sat • 600V trench gate/field termination process ) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：1.85484 Mbytes 页数：8 Pages

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慧芯电子