Trench Gate IGBT

Features: • Very low Vce(sat • 600V trench gate/field termination process ) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：1.85484 Mbytes 页数：8 Pages

HUIXIN

慧芯电子

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power

文件：397.74 Kbytes 页数：13 Pages

INFINEON

英飞凌

Schottky Barrier Diode

文件：780.34 Kbytes 页数：8 Pages

ROHM

罗姆

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: • Very low VCE(sat) 1.5V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time 5s • Designed for : - Frequency Converters - Uninterruptible Power Supply • TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distributio

文件：495.77 Kbytes 页数：12 Pages

INFINEON

英飞凌