500V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

文件：1.38167 Mbytes 页数：6 Pages

HUIXIN

慧芯电子

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

文件：229.08 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉