2SJ647

Marking：H22；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING DESCRIPTION The2SJ647isaswitchingdevicewhichcanbedrivendirectly bya2.5Vpowersource. The2SJ647featuresalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuch aspowerswit

IMH22

Marking：H22；Package：SMT6；Dual digital transistors

Features Inadditiontothefeaturesofregulardigitaltransistors. 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathighcurrentlevels,IC=600mA. 3)TwoDTC663EchipsinaSMT

LTVS2018H22T5G

Marking：H22；Package：DFN2018-6B；1- Line Uni- directional TVS Diode

MBRX220H

Marking：H22；Package：SOD-123FL；Schottky Barrier Rectifiers

MBRXFH220

Marking：H22；Package：SOD-123F；Schottky Barrier Rectifiers

R1162D221B

Marking：H22B**；Package：SOT-563；3-MODE 150mA LDO REGULATOR

R1162D221D

Marking：H22D**；Package：SOT-563；3-MODE 150mA LDO REGULATOR