丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

TI

德州仪器

丝印：H26R；Package：SOT23-5；Designed for 0.8V to 3.6V VCC Operation

General Description The SN74AUP1G126 is a single non-inverting buffer with 3−State output from ultra low power series, which can operate from a 0.8V to 3.6V supply. This device is fabricated with advanced CMOS technology to achieve ultra-high speed with high output drive. Features Designed

文件：587.29 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

TI

德州仪器

丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

TI

德州仪器

丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

TI

德州仪器

丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

TI

德州仪器

丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

TI

德州仪器

丝印：H26R；Package：VSSOP(DCU)；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：974.36 Kbytes 页数：30 Pages

TI

德州仪器

丝印：H26R；Package：VSSOP；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：973.99 Kbytes 页数：30 Pages

TI

德州仪器

丝印：H26R；Package：VSSOP；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：973.99 Kbytes 页数：30 Pages

TI

德州仪器