型号：FH2N8KW；Package：SOT-323；N-Channel MOSFET

Features High Power and Current Handing Capability, 4KV.Halogen-free Product. PWM application,Load switch, Power Management Applications Integrated Gate-Source Resistance, ESD Rating HBM＞

文件：271.38 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

型号：HRH2N65AD；Package：TO-252；650V N-Channel Planar MOSFET

Features RDSON≤ 5Ω @ Vgs=10 V, Id= 1A UltraLow gate Charge(typical typical12 .4nC) Crss (typical typical1pF) Fast switching capability 100 %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PF

文件：1.73333 Mbytes 页数：7 Pages

SY

顺烨电子

型号：RP130N231D；Package：SOT-25；Supply Current Typ. 38uA

文件：524.09 Kbytes 页数：32 Pages

Ricoh

理光

型号：RP130N231D；Package：SOT-25；LOW NOISE 150mA LDO REGULATOR

文件：510 Kbytes 页数：32 Pages

Ricoh

理光

型号：H2N3417；NPN SILICON TRANSISTOR

Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

文件：34.3 Kbytes 页数：3 Pages

HSMC

华昕

型号：H2N3904；PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N3904 is designed for general purpose switching and amplifier applications.

文件：36.38 Kbytes 页数：4 Pages

HSMC

华昕

型号：H2N3906；PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................. -55 ~ +150 °C Junction Temperature...........................

文件：37 Kbytes 页数：4 Pages

HSMC

华昕

型号：H2N4124；NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N4124 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4126 • Low Collector to Emitter Saturation Voltage

文件：34.7 Kbytes 页数：3 Pages

HSMC

华昕

型号：H2N4126；PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N4126 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4124 • High Power PT : 625mW at 25°C • High DC Current Gain hFE : 120-360 at IC=2mA

文件：36.1 Kbytes 页数：3 Pages

HSMC

华昕

型号：H2N4401；NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation : 625 mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40 V Min.

文件：40.16 Kbytes 页数：4 Pages

HSMC

华昕