NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation : 625 mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40 V Min.

文件：40.16 Kbytes 页数：4 Pages

HSMC

华昕

TO-92 Bipolar Transistor

HSMC

华昕

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC (max) = 625 mW On special request, these transistors can be manufactured in different pin configurations.

文件：87.65 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

Low Power Bipolar Transistors

文件：254.17 Kbytes 页数：7 Pages

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